Localization performance in wireless networks has been traditionally benchmarked using the Cramér-Rao lower bound (CRLB), given a fixed geometry of anchor nodes and a target. However, by endowing the target and anchor locations with distributions, this paper recasts this traditional, scalar benchmark as a random variable. The goal of this work is to derive an analytical expression for the distribution of this now random CRLB, in the context of Time-of-Arrival-based positioning.To derive this distribution, this work first analyzes how the CRLB is affected by the order statistics of the angles between consecutive participating anchors (i.e., internodal angles). This analysis reveals an intimate connection between the second largest internodal angle and the CRLB, which leads to an accurate approximation of the CRLB. Using this approximation, a closed-form expression for the distribution of the CRLB, conditioned on the number of participating anchors, is obtained.Next, this conditioning is eliminated to derive an analytical expression for the marginal CRLB distribution. Since this marginal distribution accounts for all target and anchor positions, across all numbers of participating anchors, it therefore statistically characterizes localization error throughout an entire wireless network. This paper concludes with a comprehensive analysis of this new network-wide-CRLB paradigm. Index TermsCramér-Rao lower bound, localization, order statistics, Poisson point process, stochastic geometry, Time of Arrival (TOA), mutual information, wireless networks.The authors are with Wireless@VT, Bradley

In the past few decades, the localization literature has seen many models attempting to characterize the non-lineof-sight (NLOS) bias error commonly experienced in range measurements. These models have either been based on specific measurement data or chosen due to attractive features of a particular distribution, yet to date, none have been backed by rigorous analysis. Leveraging tools from stochastic geometry, this paper attempts to fill this void by providing the first analytical backing for an NLOS bias error model. Using a Boolean model to statistically characterize the random locations, orientations, and sizes of reflectors, and assuming first-order (i.e., single-bounce) reflections, the distance traversed by the first-arriving NLOS path is characterized. Under these assumptions, this analysis reveals that NLOS bias exhibits an exponential form and can in fact be well approximated by an exponential distribution -a result consistent with previous NLOS bias error models in the literature. This analytically derived distribution is then compared to a common exponential model from the literature, revealing this distribution to be a close match in some cases and a lower bound in others. Lastly, the assumptions under which these results were derived suggest this model is aptly suited to characterize NLOS bias in 5G millimeter wave systems as well.

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