The temperature distribution in a 3-D high-power light emitting diode(LED)lamp is affect by multiple factors, the orthogonal experiment method is adopted to elucidate three main factors, an experiment is designed to verify the main finding, which is useful for an optimal design of the LED lamp.

The through silicon via technology is a promising and preferred way to realize the reliable interconnection for 3-D integrated circuit integration. However, its size and the property of the filled-materials are two factors affecting the thermal behavior of the integrated circuits. In this paper, we design 3-D integrated circuits with different through silicon via models and analyze the effect of different material-filled through silicon vias, aspect ratio and thermal conductivity of the dielectric on the steady-state temperature profiles. The results presented in this paper are expected to aid in the development of thermal design guidelines for through silicon vias in 3-D integrated circuits.

In a 3-D integrated circuit the heat source distribution has a huge effect on the temperature distribution, so an optimal heat source distribution is needed. This paper gives a numerical approach to its thermal optimization, the result can be used for 3-D integrated circuit optimal design.