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The extreme nanoscale features prescribed by the International Technology Roadmap for Semiconductors (ITRS, e.g., 11nm half-pitch for dense patterns and 4.5nm critical dimensions by 2022) require infrastructure-heavy extreme ultraviolet (EUV) and/or 4 alternative lithography approaches. We report here our efforts to direct the selfassembly of block copolymers (BCP) into device-oriented patterns initially defined by optical interference lithography (IL), and the use of self-assembled BCP patterns as masks to create nanoimprint lithography (NIL) masters via plasma etching. This project reported the first self-assembly of regular sub-20nm features directed by large-area patterns defined by interference lithography with up to 4x density multiplication. Simulation coupled with experimental verification explored critical parameters driving the complex three-dimensional configurations arising from surface interactions during directed self-assembly. NIL of BCP-defined features and patterns was demonstrated as a route to simple plasmonic structures with enhanced optical response. Finally, a non-destructive metrology framework was developed and demonstrated. 5 ACKNOWLEDGMENTSAs part of the National Institute for NanoEngineering, this work could not have even been conceived without significant contributions from and collaborations with university partners. The professors (and students) involved with this project were

The goal of this project was to expand upon previously demonstrated single carbon nanotube devices by preparing a more practical, multi-SWNT device. As a late-start, proof-of-concept project, the work focused on the fabrication and testing of chromophore-functionalized aligned SWNT field effect transistors (SWNT-FET). Such devices have not yet been demonstrated. The advantages of fabricating aligned SWNT devices include increased device cross-section to improve sensitivity to light, elimination of increased electrical resistance at nanotube junctions in random mat devices, and the ability to model device responses. The project did not achieve the goal of fabricating and testing chromophore-modified SWNT arrays, but a new SWNT growth capability was established that will benefit future projects.4