Shear-thickening materials have been widely applied in fields related to smart impact protection due to their ability to absorb large amounts of energy during sudden shock. Shearthickening materials with multifunctional properties are expanding their applications in wearable electronics, where tactile sensors require interconnected networks. However, current bifunctional shear-thickening cross-linked polymer materials depend on supramolecular networks or slightly dynamic covalently cross-linked networks, which usually exhibit lower energy-absorption density than the highly dynamic covalently cross-linked networks. Herein, we employed boric ester-based covalent adaptive networks (CANs) to elucidate the shear-thickening property and the mechanism of energy dissipation during sudden shock. Guided by the enhanced energy-absorption capability of double networks and the requirements of the conductive networks for the wearable tactile sensors, tungsten powders (W) were incorporated into the boric ester polymer matrix to form a second network. The W networks make the materials stiffer, with a 13-fold increase in Young's modulus. Additionally, the energy-absorption capacity increased nearly 7 times. Finally, we applied these excellent energy-absorbing and conductive materials to bifunctional shock-protective and strain rate-dependent tactile sensors. Considering the self-healable and recyclable properties, we believe that these anti-impact and tactile sensing materials will be of great interest in wearable devices, smart impact-protective systems, post-tunable materials, etc.

Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength.

Boron carbide thin films have been synthesized via pulsed laser deposition process using Spark Plasma Sintered (SPSed) and dual‐targets, respectively. Two kinds of structural evolutions have been found by investigation of bonding environments in as‐deposited thin films via X‐ray photoelectron spectroscopy study. With decreasing of B/C ratio, films deposited from SPSed‐target show the transformation of B11C‐CBB → B11C‐CBC. In contrast, the films deposited from dual‐target present the B11C‐CBB → B10C2‐CBB structural change.

By doping different concentrations of Mg2+ at Ni site, the (00l)‐oriented La2MgxNi1‐xMnO6 (abbreviated as LMxNMO, x = 0, 0.1, 0.2, 0.3, 0.4) double‐perovskite thin films were epitaxially grown by pulsed laser deposition. The substitutional effect of Mg2+ on the structural and magnetic properties of the films is comprehensively investigated. It is found that with the increase of Mg‐doping concentration, the in‐plane and out‐of‐plane lattice constants as well as the cell volume of the LMxNMO thin films increase, which could be ascribed to the radius difference between Mg2+ and Ni2+/Ni3+ ions, resulting in the in‐plane compressive stress in LMxNMO films. When the Mg‐doping concentration is small (x ≤ 0.1), the doped Mg2+ tends to substitute Ni3+, which restrains the intensity of antiferromagnetic interaction between Ni3+‐O‐Mn3+, resulting in the reduced the exchange bias field as well as the increased the saturation magnetization. However, when the Mg‐doping concentration increases to x ≥ 0.2, Mg2+ becomes to mainly replace Ni2+ position, which could inhibit the super‐exchange ferromagnetic interaction between Ni2+‐O‐Mn4+ magnetic paths and thus reduce the saturation magnetization. The enhanced magnetic properties can be obtained in the LM0.1NMO double‐perovskite thin film, with a large saturation magnetization of 492.12 emu/cm3 and a high Curie temperature of 262.7 K.