A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductorsThe concept of defect chemistry is applied to investigate the native defects in the InN films prepared by radio frequency magnetron sputtering. Growth temperature and pressure ranged from 150 to 300°C and from 0.005 to 0.07 torr, respectively, for the purpose of changing the defects and the related properties. InN is expected to form Frenkel defects, indium vacancies, and interstitials. Other major defects for the nitrogen-rich InN films include nitrogen-on-indium antisites and nitrogen interstitials at higher nitrogen pressure, as supported by the results of x-ray photoelectron spectroscopy. Structure, composition, and electrical properties coincide with defect types and density.