In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112    A / cm 2 . The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6 × 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000    A / cm 2 . It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

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In this study, high − 3    dB bandwidth yellow-green InGaN/GaN micro-LEDs grown on polar c-plane GaN substrates are realized by using nanoporous distributed Bragg reflectors, which can increase light extraction efficiency and serve as strain-relaxed buffers to mitigate the quantum-confined Stark effect, resulting in improved external quantum efficiency. Moreover, atomic layer deposition technology is introduced for surface defect passivation, thereby reducing the leakage current. As a result, the device exhibits the highest − 3    dB bandwidth up to 442 MHz and a data transmission rate of 800 Mbit/s at a current density of 2.5    kA / cm 2 with on–off keying modulation, and holds great promise for future high-speed visible light communication applications.

Yen-Teng Ho et al.: Epitaxy of m-plane ZnO on (112) LaAlO 3 substrate