We have demonstrated the tuning of Schottky barrier height (SBH) of nickel silicide on silicon-carbon (Si1−xCx) by varying the carbon mole fraction, x. The SBH (for electron conduction) has been found to decrease with carbon concentration at a rate of ∼6.6meV/ (0.1% carbon). We have achieved ∼27meV drop in SBH with 0.4% carbon incorporation in Si1−xCx and shown that 1.3% carbon could lead to more than 85meV improvement. Furthermore, our results show an avenue to reduce the SBH of rare earth silicide contacts in n-channel Schottky transistors by fabricating them on Si1−xCx.

It has been demonstrated that, by incorporating a thin ∼20 nm Si1−yCy (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si1−yCy layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1×1014 cm−2 at 115 keV followed by spike annealing at 1050 °C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si1−yCy layer.

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We investigated the performance of 65nm pFETs whereby the source and drain extensions (SDE) were implanted with Carborane, (C2B10H12) a novel form of molecular species. The high atomic mass of this molecule (146 a.m.u.) and the number of boron atoms transported per ion enables the productivity at low energy required for manufacturing of ultra shallow junctions for advanced scaling. In this investigation, Carborane was implanted at 13 keV to produce a Boron profile near equivalent to that produced by the reference BF2 implant. Results of electrical measurements did not exhibit any compromise in the I-V characteristics in terms of Id-Vg and Id-Vd and Ion-Ioff. External resistance and Vt roll-off shifted slightly with respect to the reference devices. This is attributed to a deeper junction with Carborane due to slight offset in the profile matching. It will be shown that with fully matched profiles, a perfect match of the device characteristics can be achieved.

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