With the development of the semiconductor industry, research on photoelectronic devices has been emphasized. In this paper, a molecular semiconductor material with a narrow bandgap of hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) was utilized to prepare photodetectors without electron transport layers. Using a single light source, the effects of different wavelengths and different powers on the photoresponsivity, switching ratio, specific detectivity, and external quantum efficiency of the device were investigated. It is demonstrated that this device has excellent responsivity, specific detectivity, stability, and repeatability, and this work will help expand the application of molecular semiconductor materials for photodetection.

The electron transport layer (ETL) is critical to carrier extraction for perovskite solar cells (PSCs). Moreover, the morphology and surface condition of the ETL could influence the topography of the perovskite layer. ZnO, TiO2, and SnO2 were widely investigated as ETL materials. However, TiO2 requires a sintering process under high temperature and ZnO has the trouble of chemical instability. SnO2 possesses the advantages of low-temperature fabrication and high conductivity, which is critical to the performance of PSCs prepared under low temperature. Here, we optimized the morphology and property of SnO2 by modulating the concentration of a SnO2 colloidal dispersion solution. When adjusting the concentration of SnO2 colloidal dispersion solution to 5 wt.% (in water), SnO2 film indicated better performance and the perovskite film has a large grain size and smooth surface. Based on high efficiency (16.82%), the device keeps a low hysteresis index (0.23).

The power conversion efficiency of modern perovskite solar cells has surpassed that of commercial photovoltaic technology, showing great potential for commercial applications. However, the current high-performance perovskite solar cells all contain toxic lead elements, blocking their progress toward industrialization. Lead-free tin-based perovskite solar cells have attracted tremendous research interest, and more than 14% power conversion efficiency has been achieved. In tin-based perovskite, Sn2+ is easily oxidized to Sn4+ in air. During this process, two additional electrons are introduced to form a heavy p-type doping perovskite layer, necessitating the production of hole transport materials different from that of lead-based perovskite devices or organic solar cells. In this review, for the first time, we summarize the hole transport materials used in the development of tin-based perovskite solar cells, describe the impact of different hole transport materials on the performance of tin-based perovskite solar cell devices, and summarize the recent progress of hole transport materials. Lastly, the development direction of lead-free tin-based perovskite devices in terms of hole transport materials is discussed based on their current development status. This comprehensive review contributes to the development of efficient, stable, and environmentally friendly tin-based perovskite devices and provides guidance for the hole transport layer material design.

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We summarize the development and application of ABX3-type lead-free halide perovskite materials, especially in optoelectronic devices.