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Wafer bonding using Sn interlayer and silicon bond components with Ti/Ni/Cu metallization was achieved by ultrasonic bonding at ambient temperature for 4 s under 0.6 MPa. High-melting-point joint which fully consisted of Cu3Sn intermetallic compounds was formed with a high shear strength of 65.8 MPa and a low electrical resistivity of 67.3 μΩ · cm. Experimental results showed that ultrasonic vibration induced steep temperature rise at rubbing interface, melting solid solder, and sequent ultrasonic effects at the liquid Sn/solid Cu interface dominated the mechanism and kinetics of rapid formation of Cu3Sn joint.

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