The correlation between the nature of alkyl substituents on N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD)-based polymers and solar cell device performance has been investigated. After adjusting device parameters, these TPD-based polymers used with PC(61)BM provided photovoltaic responses ranging from 4.0% to 6.8%, depending on the size and shape of the alkyl solubilizing groups. Further, we have correlated the effect of the alkyl groups on the structural order and orientation of the polymer backbone using grazing incidence X-ray scattering analysis, and we have demonstrated how fine-tuning of these parameters can improve the power conversion efficiency.

The performance of organic photovoltaic (OPV) devices is currently limited by modest short-circuit current densities. Approaches toward improving this output parameter may provide new avenues to advance OPV technologies and the basic science of charge transfer in organic semiconductors. This work highlights how steric control of the charge separation interface can be effectively tuned in OPV devices. By introducing an octylphenyl substituent onto the investigated polymer backbones, the thermally relaxed charge-transfer state, and potentially excited charge-transfer states, can be raised in energy. This decreases the barrier to charge separation and results in increased photocurrent generation. This finding is of particular significance for nonfullerene OPVs, which have many potential advantages such as tunable energy levels and spectral breadth, but are prone to poor exciton separation efficiencies. Computational, spectroscopic, and synthetic methods were combined to develop a structure-property relationship that correlates polymer substituents with charge-transfer state energies and, ultimately, device efficiencies.

Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole‐dominated on‐state, the off‐state, and the electron‐dominated on‐state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal‐oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light‐emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field‐effect transistors, we focus on ambipolar light‐emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current‐driven laser, as well as for photonics–electronics interconnection.