Alumina is a technologically important oxide crystal because of its use as a catalyst and as a substrate for microelectronic applications. A precise knowledge of its surface atomic structure is a prerequisite for understanding and controlling the physical processes involved in many of its applications. Here we use a dynamic scanning force microscopy technique to image directly the atomic structure of the high-temperature phase of the alpha-Al2O3(0001) surface. Evidence for a surface reconstruction appears as a grid of protrusions that represent a rhombic unit cell, and we confirm that the arrangement of atoms is in the form of surface domains with hexagonal atomic order at the centre and disorder at the periphery. We show that, on exposing the surface to water and hydrogen, this surface structure is important in the formation of hydroxide clusters. These clusters appear as a regular pattern of rings that can be explained by self-organization processes involving cluster-surface and cluster-cluster interactions. Alumina has long been regarded as the definitive test for atomic-resolution force microscopy of insulators so the whole class of insulating oxides should now open for direct atomic-scale surface investigations.

The current status and future prospects of non-contact atomic force microscopy (nc-AFM) and Kelvin probe force microscopy (KPFM) for studying insulating surfaces and thin insulating films in high resolution are discussed. The rapid development of these techniques and their use in combination with other scanning probe microscopy methods over the last few years has made them increasingly relevant for studying, controlling, and functionalizing the surfaces of many key materials. After introducing the instruments and the basic terminology associated with them, state-of-the-art experimental and theoretical studies of insulating surfaces and thin films are discussed, with specific focus on defects, atomic and molecular adsorbates, doping, and metallic nanoclusters. The latest achievements in atomic site-specific force spectroscopy and the identification of defects by crystal doping, work function, and surface charge imaging are reviewed and recent progress being made in high-resolution imaging in air and liquids is detailed. Finally, some of the key challenges for the future development of the considered fields are identified.