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a b s t r a c tTemperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range 60-300 K. The room temperature values for the zero bias barrier height from the I-V measurements (F I-V ) was found to be 0.52 eV and from the C-V measurements (F C-V ) as 3.83 eV. From the temperature dependence of forward bias I-V, the barrier height was observed to increase with temperature, a trend that disagrees with the negative temperature coefficient for semiconductor material. The C-V barrier height decreases with temperature, a trend that is in agreement with the negative temperature coefficient of semiconductor material. This has enabled us to fit two curves in two regions (60-120 K and 140-300 K). We have attributed this behaviour to a defect observed by DLTS with energy level 0.31 eV below the conduction band and defect concentration of between 4 Â 10 16 and 6 Â 10 16 cm À 3 that traps carriers, influencing the determination of the barrier height.

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The authors have investigated by deep level transient spectroscopy the electron traps introduced in n-type Ge during sputter deposition of Au Schottky contacts. They have compared the properties of these defects with those introduced in the same material during high-energy electron irradiation. They found that sputter deposition introduces several electrically active defects near the surface of Ge. All these defects have also been observed after highenergy electron irradiation. However, the main defect introduced by electron irradiation, the V-Sb center, was not observed after sputter deposition. Annealing at 250°C in Ar removed the defects introduced during sputter deposition.