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A theoretical study of nonlinear charge transport in polar semiconductors is presented. It is based on a nonequilibrium statistical ensemble formalism which provides a generalized Boltzmann-style nonlinear quantum kinetic theory. The mobility and the diffusion coefficients are obtained and, relating both, a Nernst-Townsend-Einstein relation is derived extended to the nonlinear regime ͑i.e., outside the Ohmic domain͒. Numerical calculations are performed considering the particular case of the strongly polar III nitrides, which have application in blue-emitting diodes.

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A theoretical study on the electron drift velocity and some nonequilibrium thermodynamic characteristics of wurtzite GaN, AlN, and InN is presented. It is based on a nonlinear quantum kinetic theory which provides a description of the dissipative phenomena developing in the system. The ultrafast time evolution of the electron drift velocity and quasitemperature is obtained, and overshoot effects are evidenced on both. The overshoot onsets are shown to occur at 20 kV/cm in GaN, 60 kV/cm in AlN, and 10 kV/cm in InN, electric field intensities which are considerably smaller than those that have been recently derived resorting to Monte Carlo simulations.

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