"Spintronics," in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics. A complete logic architecture can be constructed, which uses planar magnetic wires that are less than a micrometer in width. Logical NOT, logical AND, signal fan-out, and signal cross-over elements each have a simple geometric design, and they can be integrated together into one circuit. An additional element for data input allows information to be written to domain-wall logic circuits.

As fabrication technology pushes the dimensions of ferromagnetic structures into the nanoscale, understanding the magnetization processes of these structures is of fundamental interest, and key to future applications in hard disk drives, magnetic random access memory and other 'spintronic' devices. Measurements on elongated magnetic nanostructures highlighted the importance of nucleation and propagation of a magnetic boundary, or domain wall, between opposing magnetic domains in the magnetization reversal process. Domain-wall propagation in confined structures is of basic interest and critical to the performance of a recently demonstrated magnetic logic scheme for spintronics. A previous study of a 500-nm-wide NiFe structure obtained very low domain-wall mobility in a three-layer device. Here we report room-temperature measurements of the propagation velocity of a domain wall in a single-layer planar Ni80Fe20 ferromagnetic nanowire 200 nm wide. The wall velocities are extremely high and, importantly, the intrinsic wall mobility is close to that in continuous films, indicating that lateral confinement does not significantly affect the gyromagnetic spin damping parameter to the extreme extent previously suggested. Consequently the prospects for high-speed domain-wall motion in future nanoscale spintronic devices are excellent.

An all-metallic submicrometer device is demonstrated experimentally at room temperature that performs logical NOT operations on magnetic logic signals. When this two-terminal ferromagnetic structure is incorporated into a magnetic feedback loop, the junction performs a frequency division operation on an applied oscillating magnetic field. Up to 11 of these junctions are then directly linked together to create a magnetic shift register.