The impact of doping and metalorganic chemical vapour deposition growth conditions on the minority carrier lifetime of zinc-and carbon-doped InGaAs is reported. Room temperature photoluminescence measurements have been employed to obtain direct information on the non-radiative lifetime of the materials. Low growth temperature and low V/III ratio lead to the lower carrier lifetime of the carbon-doped InGaAs samples. InP/InGaAs heterostructure bipolar transistors were grown and fabricated using both zinc-and carbon-doped InGaAs layers as the base regions. The current gain values measured for these devices agree well with the values calculated from the carrier lifetime and mobility/diffusion coefficient measurements.

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