No abstract

Б а с р е д а к т о р ы ф.-м.ғ.д., проф., ҚР ҰҒА академигі Ғ.М. Мұтанов Р е д а к ц и я а л қ а с ы: Жұмаділдаев А.С. проф., академик (Қазақстан) Кальменов Т.Ш. проф., академик (Қазақстан) Жантаев Ж.Ш. проф., корр.-мүшесі (Қазақстан) Өмірбаев У.У. проф. корр.-мүшесі (Қазақстан) Жүсіпов М.А. проф. (Қазақстан) Жұмабаев Д.С. проф. (Қазақстан) Асанова А.Т. проф. (Қазақстан) Бошкаев К.А. PhD докторы (Қазақстан) Сұраған Д. корр.-мүшесі (Қазақстан) Quevedo Hernando проф. (Мексика), Джунушалиев В.Д. проф. (Қырғыстан) Вишневский И.Н. проф., академик (Украина) Ковалев А.М. проф., академик (Украина) Михалевич А.А. проф., академик (Белорус) Пашаев А. проф., академик (Əзірбайжан) Такибаев Н.Ж. проф., академик (Қазақстан), бас ред. орынбасары Тигиняну И. проф., академик (Молдова) «ҚР ҰҒА Хабарлары. Физика-математикалық сериясы».

The methods of purification of "Kazsilicon" metallurgical silicon produced by the carbothermal method, i.e., the reduction of high purity Sary Kol quartz into carbon, are developed. These technologies provide the basis for the industrial production of silicon, solar cells, panels, and solar power plants. Using these technologies, solar grade silicon is produced, on the basis of which solar cells with an efficiency of 15.8-17.1% are fabricated. Panels of solar cells compose the "Astana Solar", i.e., the first solar power plant in Kazakhstan with a power of 250 kW, which was put into operation December 25, 2012.

In the frame of permanent objective to increase solar cell efficiency and to decrease production cost the monolike ingot process was designed which combine multicrystalline (mc) productivity and monocrystalline structure performances. As a raw material the mc-Solar Grade silicon (SoG-Si) was used because it is less expensive than the Si purified by gas chemical route (Siemens process or equivalent), Usage of the mc-SoG-Si for growing silicon ingots by monolike process should contribute to the ingot and wafer manufacturing cost decrease. SoG silicon using would be developed all the more fast since it enables to produce high efficiency solar cells. It is why the monolike process have been tested and optimized for Kazakhstan mc-SoG silicon. The objective of this work was study of the higher level content impurities influences on the crystal defect generation (mainly dislocations) of the monocrystalline structure. Visual monocrystalline structure, minority carrier lifetime mapping, and photoluminescence techniques were used to study the monolike ingots obtained from Kazakhstan’s mc-SoG silicon.

The investigation of the properties of solar cells based on Kazakhstan silicon The study of the properties of solar cells is a relevant topic since the development of solar energy corresponds to the global trend and the course of the Government of the Republic of Kazakhstan on the transition to a «green» economy. Various properties of solar cells such as resistivity and surface resistance, carrier lifetime, reflectivity, quantum efficiency, directly affect the efficiency of solar cells. This paper is devoted to obtaining and comprehensive study of solar cells manufactured on the basis of the Kazakhstani silicon of «solar» quality. The study applied: a method of microwave detected photoconductive decay (μ-PCD), four probe methods for measuring resistance, methods for spectrometric analysis of reflection, transmission and photoluminescence coefficients, scanning electron microscopy, and methods for analyzing current-voltage characteristics. The mastered methods of solar cells production are described. A modification of the standard Back Surface Field (BSF) cell line to the Passivated Emitter and Rear Cell (PERC) line has been proposed.