The amplitude-time characteristics of switching in thin films of cadmium telluride were investigated when single impulses of 1 μs duration are applied. It has been experimentally established that with an increase in the thickness of the cadmium telluride layer from 3 m to 8 m, an increase in the operating threshold from 70 V to 105 V is observed. The maximum residual sample voltage varies from 12 V to 40 V, the minimum-from 5 V to 20 V. The switching time of the samples was no more than 2 nanoseconds; the interelectrode capacity of the samples was no more than 2 pF. All the test samples were operated without failure 20 times. The structural studies of cadmium telluride films by the method of X-ray diffractometry and scanning electron microscopy have made it possible to propose a mechanism for realizing the monostable switching of the columnar structure of cadmium telluride films oriented in the form of melted highconductivity channels in grains oriented in the [111] direction Кeywords: Cadmium Telluride films, Amplitude-time characteristics, X-ray diffractometry, Scanning electron microscopy, Melted high-conductivity channel.

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