Topologically protected surface states present rich physics and promising spintronic, optoelectronic, and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of bulk carriers by combining photoexcitation with below-bandgap terahertz (THz) photons and TI samples with varying Fermi level, including one sample with the Fermi level located within the bandgap. We identify distinctly faster relaxation of charge carriers in the topologically protected Dirac surface states (few hundred femtoseconds), compared to bulk carriers (few picoseconds). In agreement with such fast cooling dynamics, we observe THz harmonic generation without any saturation effects for increasing incident fields, unlike graphene which exhibits strong saturation. This opens up promising avenues for increased THz nonlinear conversion efficiencies, and high-bandwidth optoelectronic and spintronic information and communication applications.

In this study, the efficient generation of terahertz radiation by a dipole photoconductive antenna, based on a thin island film of a topological insulator, was experimentally demonstrated. The performance of the Bi1.9Sb0.1Te2Se antenna was shown to be no worse than those of a semiconductor photoconductive antenna, which is an order of magnitude thicker. The current–voltage characteristics were studied for the photo and dark currents in Bi1.9Sb0.1Te2Se. The possible mechanisms for generating terahertz waves were analyzed by comparing the characteristics of terahertz radiation of an electrically biased and unbiased topological insulator.

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An experimental scheme and data processing approaches are proposed for measuring by analog photo detectors the normalized second-order correlation function of the biphoton field generated under spontaneous parametric down-conversion. Obtained results are especially important for quantum SPDC-based technologies in the long-wave spectral ranges, where it is difficult to use the single-photon detector at least in one of the two biphoton channels. The methods of discrimination of analog detection samples are developed to eliminate the negative influence of the detection noises and get quantitatively true values of both the correlation function and the detector quantum efficiency. The methods are demonstrated depending on whether two single-photon avalanche photo detectors are used in both SPDC channels, or at least one single-photon detector is replaced by a photo-multiplier tube which cannot operate in the photon counting mode.