Articles you may be interested inResonance effects in photoemission from TiO2-capped Mo/Si multilayer mirrors for extreme ultraviolet applications J. Appl. Phys. 109, 083112 (2011); 10.1063/1.3575319 Improvement of the morphological stability of Ni-silicided Si 0.8 Ge 0.2 layers by using a molybdenum interlayer Growth and thermal behavior of sputtered Mo/Al 2 O 3 multilayers

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High temperature stability of platinum silicide, formed by reacting metal with silicon or by cosputtering metal and silicon in a desired ratio, has been studied. The properties of films, thus formed, were examined as a function of annealing temperature using a resistance measuring technique, Rutherford backscattering, Auger and x-ray analyses, transmission and scanning electron microscopic techniques, and by measuring forward current-voltge (I-V) characteristics of the silicide n-silicon Schottky diodes. It is shown that cosputtering silicon rich alloys prevents agglomeration of the silicide, but increases the resistivity and decreases the Schottky barrier height of the film. Platinum silicide dissolves increasing amounts of silicon on high temperature (700–1000 °C) treatments causing considerable degradation of properties. Although cosputtering silicon rich alloys reduces this behavior, electrical properties such as forward I-V characteristics still degrade due to high temperature anneals.

Articles you may be interested inEffects of tantalum penetration through hafnium oxide layer on carrier generation rate in silicon substrate and carrier mobility degradation Appl. Phys. Lett. 86, 012901 (2005); 10.1063/1.1845588Diffusion and oxidation of plasma-enhanced chemical-vapor-deposition silicon nitride and underlying metals Oxidation characteristics of the tantalum disilicide films have been investigated in the temperature range of 900°-1050 °C in dry oxygen and steam ambients. The silicide does not oxidize in dry oxygen and oxidizes in steam at a rate lower than that of doped polycrystalline silicon films as long as there is a polycrystalline silicon layer between the silicide and the gate oxide. Under these circumstances, the silicide retains its electrical and mechanical characteristics. The oxide on the silicide has an etch rate (in buffered hydrofluoric acid) similar to that of thermal Si0 2 on silicon. Electrical characteristics of the oxide appear to be similar to those ofthe wet oxide on polycrystalline silicon. In the absence of poly crystalline silicon, between the silicide and the gate oxide, oxidation leads to a loss in the conductivity of the silicide and eventually to a mechanical instability of the film. An oxidation mechanism, which assumes silicon diffusion by substitution through the silicide, has been proposed.PACS numbers: 68.90. + q, 81.60. -j, 68.55. + b, 8l.15.Cd

The low resistivity of the titanium disilicide makes this material attractive for gate and interconnect metallizations. TiSi2 has been formed by reacting Ti films with polycrystalline and monocrystalline silicon in the temperature range 400–1100 °C. The interaction is investigated by use of sheet resistance, x-ray diffraction, and stress measurements. It has been found that Ti and Si react very rapidly to form both TiSi and TiSi2 at temperatures ? 700 °C and only TiSi2 at temperatures ≳ 700 °C. The TiSi2 films are associated with a very low resistivity (∼15 μΩ cm), high tensile stress [∼ (1–2) ×1010 dyn/cm2)], and a rough surface. Silicided structures are mechanically stable. It is proposed that the silicon, as the predominant diffusing species, first diffuses into titanium to completely convert titanium into TiSi and then into TiSi to form TiSi2.