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This paper describes a 90 V, 300 m mm 2 RESURF P-type drain extended MOS (PDEMOS) transistor in a 0.35 m based smart power technology.The excellent performance of the device is realised with a dedicated Pdrift layer, designed to achieve maximum benefit from the RESURF effect. The proposed approach is very cost effective since there is only one extra mask for the Pdrift layer, no high-tilt implant (no extra mask for a Nbody) and no extra thermal budget.

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