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Noise analysis of buried channel CCD by computer simulation is presented. The potential profile and signal charge distribution in potential well are obtained by solving Poisson's equation with a depletion approximation model. According to this model, it is possible to predict the volume occupied by signal charges in potential well. Thereby, the well capacitance and free carrier density are obtained. Then the device noise in the buried channel charge-coupled device, including the output reset noise, dark current noise, transfer noise and electrical injection noise at the input, can be calculated. Also, the charge handling capacity can be evaluated by integrating over the charge occupied volume.The dependences of the electrical injection noise and transfer noise on charge packet size and operating frequency have been calculated. This model can also calculate quantitatively the dependence of the charge handling capacity and the position of maximum potential on the magnitude of clock voltage.The noise behavior of BCCDs is measured with respect to different input charges, clock magnitudes, and frequencies. Experimental results reveal that if the device is operated near the saturation region, in which V out /V in maintain a linear relationship but the gain of the output amplifier starts to saturate, then the input noise may be reduced by a factor of about 2.