We investigated the transport dynamics of individual magnetic domain walls by employing electrical measurements in multiterminal Ga 1−x Mn x As microdevices. Domain wall propagation velocities were deduced from time-of-flight planar Hall measurements between multiple electrical probes of our samples. Domain wall motion induced by both magnetic field and electric currents was systematically investigated. Dependent on the strength of applied in-plane magnetic field, two regimes of domain wall motion, involving thermally assisted flow for low fields and viscous flow for high fields, have been identified. However our data shows no evidence of spin-current induced domain wall motion.

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Inorganic chemistry Z 0100Optical Properties of III-Mn-V Ferromagnetic Semiconductors -[203 refs.]. -(BURCH, K. S.; AWSCHALOM, D. D.; BASOV, D. N.; J. Magn. Magn. Mater. 320 (2008) 23, 3207-3228; Dep. Phys., Univ. Toronto, Toronto, Ont. M5S 1A7, Can.; Eng.) -Schramke 09-226

Inorganic chemistry Z 0100 Optical Properties of III-Mn-V Ferromagnetic Semiconductors -[203 refs.]. -(BURCH, K. S.; AWSCHALOM, D. D.; BASOV, D. N.; arXiv.org, e-Print Arch., Condens. Matter 2008, arXiv:0810.3669v1, 1-45; Dep. Phys., Univ. Toronto, Toronto, Ont. M5S 1A7, Can.; Eng.) -Schramke 48-217

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