This paper demonstrates the synthesis of SnO 2 nanoparticles using a simple hydrothermal route in the presence of the surfactant hydrazine at 100°C for 12 h. X-ray diffraction (XRD), field emission scanning electron microscopy, and transmission electron microscopy (TEM) were employed to characterize the as-prepared product, and optical property was studied by UV-visible diffuse reflectance spectroscopy (DRS). The XRD pattern of the as-prepared sample is indexed to the tetragonal structure of SnO 2 , and the calculated particle size is 22.4 nm, which is further confirmed by TEM. The selected area electron diffraction patterns showed continuous ring patterns without any additional diffraction spots and rings of secondary phases, revealing their crystalline structure. Analysis of the DRS spectrum showed the bandgap of the synthesized SnO 2 to be 3.6 eV. The anionic surfactant hydrazine plays a key role in the formation of the SnO 2 nanostructures. A probable reaction for the formation of SnO 2 nanoparticles is proposed.

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Nanocrystalline SnO 2 thin films were successfully prepared using sol-gel dip coating technique. The starting precursor was used as tin chloride dihydrate (SnCl 2 .2H 2 O), ethanol and glycerin. As the prepared films were fired at 500 o C. These films were characterized using XRD, FE-SEM and TEM to known crystal structure, surface morphology and microstructure property. Elemental composition was studied using energy dispersive spectrophotometer (EDAX). The H 2 gas sensing performance of nanocrystalline SnO 2 thin films were investigated and presented. It was found that the nanocrystalline SnO 2 thin films gives maximum gas response (S= 360) at 75 o C. The sensor shows fast speed of response (T Response = 2 s) and quick recover (T recover = 8 s).

Nanostructured SnO 2 thin films were grown by the chemical spray pyrolysis (CSP) method. Homemade spray pyrolysis technique is employed to prepare thin films. SnO 2 is wide bandgap semiconductor material whose film is deposited on glass substrate using aqueous solution of SnCl 4 · 5H 2 O as a precursor. XRD (X-ray diffraction), UV (ultraviolet visible spectroscopy), FESEM (field emission scanning electron microscopy), and EDS (energy dispersive spectroscopy) analysis are done for structural, optical, surface morphological, and compositional analysis. XRD analysis shows polycrystalline nature of samples with pure phase formation. Crystallite size calculated from diffraction peaks is 29.92 nm showing nanostructured thin films. FESEM analysis shows that SnO 2 thin film contains voids with nanoparticles. EDS analysis confirms the composition of deposited thin film on glass substrate. UVvisible absorption spectra show that the bandgap of SnO 2 thin film is 3.54 eV. Bandgap of SnO 2 thin film can be tuned that it can be used in optical devices.

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