The size regime for devices produced by photolithographic techniques is limited. Therefore, other patterning techniques have been intensively studied to create smaller structures. Scanning-probe-based patterning techniques, such as dip-pen lithography, local force-induced patterning, and local-probe oxidation-based techniques are highly promising because of their relative ease and widespread availability. The latter of these is especially interesting because of the possibility of producing nanopatterns for a broad range of chemical and physical modification and functionalization processes; both the production of nanometer-sized electronic devices and the formation of devices involving (bio)molecular recognition and sensor applications is possible. This Review highlights the development of various scanning probe systems and the possibilities of local oxidation methods, as well as giving an overview of state-of-the-art nanometer-sized devices, and a view of future development.

In current scanning‐probe nanolithography research, substrates consisting of octadecyl trichlorosilane monolayers on silicon are often used. On one hand, the presence of an organic monolayer can be used as a passive resist, influencing the formation of silicon dioxide on the substrate, whereas in other cases the monolayer itself is patterned, creating local chemical functionality. In this study we investigate the time scales involved in either process. By looking at friction and height images of lines oxidized at different bias voltages and different pulse durations, we have determined the parameter space in which the formation of silicon dioxide is dominant as well as the region in which the oxidation of the monolayer itself is dominant.

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