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TiO 2 thin films have been deposited at low temperature using a new atmospheric pressure deposition process, which combines remote Atmospheric Pressure (AP) Plasma with Pulsed Injection Metallorganic Chemical Vapour Deposition (PIMOCVD). The effects of postdischarge plasma and deposition parameters have been studied with respect to the deposition kinetics, morphology, and microstructure of TiO 2 films. It is shown that well-crystallised TiO 2 anatase films can be obtained at a temperature of only 275°C.