In this paper we present a comprehensive study of the tetrahedral semiconductor ZnSe crystallizing in the zincblende structure. The electronic structure of ZnSe has been determined first using the ab initio self-consistent linear muffin-tin orbital method with a local-density form of the exchange-correlation functional. Then it has been adjusted to reproduce the experimental energy positions of the Zn 3d bands and of the optical gap. The adjusted electronic structure, densities of states and interband optical properties are presented and compared with previous calculations. Good agreement with experimental photoemission and bremsstrahlung isochromat measurements was found after including an energy-dependent lifetime broadening. We measured the reflectivity of ZnSe with high resolution from 4 to 30 eV and the high-energy region of the spectra has been interpreted on the basis of the present calculation.

The absorption coefficient of several diluted magnetic semiconductors was measured below the fundamental absorption edge of the pure host compound at room temperature using the photoacoustic technique. Several absorption bands have been detected and assigned to electronic transitions between the crystal field split 3d levels of the transition metal ion. In addition, weak absorption thresholds have been observed and assigned to the ionization of the transition metal d states. An energy level diagram of the d states has been discussed.

The reflectivity and photoconductivity spectra for mixed crystals Cd1-xFexTe (0.00

In this paper we present partial densities of states for spin-polarized antiferromagnetic phase of Zn0.5 Co0.5 Se as well as schematic layouts of the bands, obtained using the ab initio self-consistent semi-relativistic linear muffin tin orbital method. We also present, from theoretical point of view, the analysis of influence of the transition metal cobalt on the electronic structure of a pure ZnSe.