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In the pressure sensors domain, the SO1 structures bring some advantages:. electrical insulation, high temperature sensors, an excellent etch stop layer (buried oxide), compatibility with microelectronic technology, lowering in thermal noise. The goal of this paper is to highlight a pressure sensor based on a coupling between piezoelectric effect in PZT and an Y--MOSFET. The analytical models, that will be presented, stand for a useful tool at a first iteration of the sensor designing.

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