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An experimental study of the fundamental limits to current density, power, and speed of light-activated semiconductor switches (LASS) is described. The LASS investigated are high-voltage silicon junction devices illuminated with 1.06-μm laser light. A novel optical delay line is designed in sampling the laser pulses. Experimental results to date demonstrated a switch power of 6.7 MW, a peak electrical pulse power of 4.8 kW, a current density of 150 kA/cm2, a power density of 5.3 GW/cm3, and an electrical pulse rise time of 100 ps. The results of theoretical analysis indicate that the circuit configuration is the main limitation to the pulse rise time.

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