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An extension is presented of an earlier model of the epitaxial growth of GaAs (100) under reduced pressure to include sulfur incorporation. In describing the growth of doped crystals, the dopant is treated in the same manner as the lattice components. Its incorporation flux is obtained from a dynamic balance between diffusion of the gaseous reactants towards the substrate and a sequence of surface processes. In the case of sulfur doping, the process is described as first leading to the formation of GaS which subsequently yields a regular solution GaAsl ~S~. The molar ratio x is determined by the ratio of the incorporation flux of the dopant and the growth rate of GaAs. Model calculations show quantitative agreement with the experimental data for the Ga-HC1-AsH3-H2-H~S system at various H~ pressure s.

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