We have carried out direct diffusion measurements of Cu into Ta 2 N. Thin films of 50nm thickness of Cu were grown onto a thick Ta 2 N layer of 1µm deposited by Ionized Metal Plasma (IMP). Samples were annealed in a rapid thermal system from temperatures ranging from 400°C to 750°C for periods of 180s. Results based on sheet resistance measurements, x-ray diffraction analyses, atomic force microscopy measurements and secondary ion mass spectroscopy analyses consistently follow a transformation of amorphous Ta 2 N to a crystalline phase and finally forming Cu-Ta-O compounds at higher annealing temperatures. The copper and tantalum nitride diffusion profile was performed using Secondary Ion Mass Spectroscopy. The Cu diffusion coefficients in Ta 2 N can be described by 1.5778 × 10 -12 exp (-0.4066 eV/kT) cm 2 /s. To assure reliability, the extent of both diffusions should be considered in device design and processing.

InSb 1-x N x materials were fabricated by direct nitrogen implantation into InSb wafer and they are characterized by X-ray diffraction, Hall measurement, X-ray photoelectron spectroscopy. In-N bonds are clearly demonstrated and other forms of nitrogen, such as antisites (N In ), interstitial N 2 , also exist in the grown films. The ratio to the total nitrogen bonds formed in the materials varies with preparation conditions. The optical bandgap data confirmed bandgap narrowing due to the incorporation of nitrogen. Photoconductive and photovoltaic photodetectors are fabricated and the cut-off frequencies of up to 11.5 μm are demonstrated.