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We report on the design, fabrication and characterization of a monolithic(a1ly integrated InP/InGaAs PIN/HBT-Photoreceiver for a wavelength of X = 1.55pm. The three-stage-amplifier achieves a transimpedance of 54.5dBR (5300) and the optical/electrical-3dB-bandwidth of the entire receiver is 23GHx. This corresponds to a transimpedance-bandwidth product olf 12THxR, which is one of the highest values published to date.

We report on the characterization of a monolithically integrated InP/InGaAs PIN/HBTPhotoreceiver for a wavelength of X = 1.55pm. The preamplifier achieves a transimpedance gain of 44.3 d B 0 (1640) and a bandwidth of 63 G H z , whereas the optical/electrical -3dB-bandwidth of the entire receiver is 53 G H z . A pulse width of 1 0 . 5~s was measured for the system consisting of receiver, on-wafer probe, bias-tee and sampling-scope. Finally we present eye pattern measurements at 40Gb/s with a RZ coded optical input signal.