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High-quality ZnS∕GaP (100) epilayers were grown by hot-wall epitaxy, and their optical properties were investigated in a wide photon-energy range between 3.0 and 8.5 eV at room temperature using spectroscopic ellipsometry. The obtained data were analyzed for the critical points of pseudodielectric function spectra, ⟨ε(E)⟩=⟨ε1(E)⟩+i⟨ε2(E)⟩, such as E0,E0+Δ0,E1, and three E2(Σ,Δ,Γ) structures. In particular, it was found that the E1 structure was separated into an E1(Λ3→Λ1) structure and an E1′(L3→L1) structure by the strong strain effect in thinner ZnS epilayers. This E1′ structure was observed by ellipsometric measurements. The position of the E1′ peak was varied with a thickness change of the epilayers. Note that the critical thickness determined by the change of E1′ peak was compared with the result obtained by the full width at half maximum of the double crystal rocking curve, and good agreement was obtained.

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