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Background: The nuclear structure of the cluster bands in 20 Ne presents a challenge for many theoretical approaches. It is especially difficult to explain the broad 0 + and 2 + states, both at around 9 MeV excitation energy. More reliable experimental data for these levels is important for proper quantitative assessment and development of theoretical methods.Purpose: To obtain new data on 20 Ne α-cluster structure.Method: Thick target inverse kinematics technique was used to study the 16 O+α resonance elastic scattering and the data were analyzed using an R-matrix approach. The 20 Ne spectrum, the cluster and nucleon spectroscopic factors were calculated using cluster-nucleon configuration interaction model (CNCIM). Conclusions: Our experimental results obtained by the TTIK method generally confirm the adopted data on α cluster levels in 20 Ne. The CNCIM gives a good description of the 20 Ne positive parity states up to an excitation energy of ∼ 7 MeV, predicting reasonably well the excitation energy of the states and their cluster and single particle properties. At higher excitations, a qualitative disagreement with the experimentally observed structure is evident, especially for broad resonances.

In principle, they convert optical electromagnetic signals into electrical signals and reveal a linear dependence of the photocurrent on the light intensity.Currently, perovskite photodiodes based on various new synthesized materials have been developed, which in terms of responsivity and detectivity to incident light are close to commercially available photo diodes. [8][9][10][11] Radiation resistance of perovskite solar cells has attracted much attention recently and it was tested in a wide range of proton energies from 150 keV up to 68 MeV with accumulated fluences up to 10 14 protons cm −2 . [12][13][14][15][16] Interestingly the radiation resistance of hybrid perovskite materials vastly surpasses that of well-established elementary semiconductors Ge, Si, and even outperforms the relatively radiation resistant inorganic compound semiconductors such as GaAs and CdTe. [12,13,17,18] This indicates that optoelectronic and photovoltaic devices based on perovskite materials have huge potential for application in the space industry and radioactively contaminated terrestrial regions.So far, only Xiong et al. [19] reported on radiation hardness of perovskite photodiodes based on conventional low-stability methyl ammonium lead iodide CH 3 NH 3 PbI 3 perovskite active This work reports, for the first time, on radiation resistance of state-of-the-art multicomponent Cs 0.04 Rb 0.04 (FA 0.65 MA 0.35 ) 0.92 Pb(I 0.85 Br 0.14 Cl 0.01 ) 3 perovskite photodiodes, tested under high-intensity pulsed 170 keV proton irradiation with fluence up to 10 13 protons cm −2 . The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 10 12 protons cm −2 even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 10 13 protons cm −2 deteriorates photodiode parameters on average by only 25% with respect to that of the as-prepared devices. The revealed high-performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low-cost solution-processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions.