InGaN epilayers with gallium fractions ranging between 0 and 0.48 have been studied by time-resolved photoluminescence. Layers containing low gallium fractions are associated with low PL emission intensity. For In 0.83 Ga 0.17 N layer, the luminescence decay is 100 times faster in the high energy part of the photoluminescence spectrum than on the low energy part, reflecting the hot carrier recombination process. This is confirmed by the significant blue shift of the photoluminescence spectra for short decay times compared to the time integrated spectrum. It takes about 10 ps for the carriers to reach an equilibrium temperature of 100 K.

We report on the Mg-doped, indium-rich GaxIn1−xN (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30  150 K, is determined by the longitudinal-optical phonon scattering together with the thermal regeneration of non-equilibrium minority carriers from traps with an average depth of 103 ± 15 meV. This value is close to the Mg binding energy in GaInN. The complementary measurements of transient photoluminescence at liquid He temperatures give the e-A0 binding energy of approximately 100 meV. Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 ± 20 meV.