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Solid phase epitaxy is used to produce Al- and Sb-doped silicon layers on high resistivity p- and n-Si of ⟨1 1 1⟩ orientation to create p–n junctions and ohmic contacts. I–V characteristics showing a low reverse current (less than 1 µA) are obtained on a junction area of 38 mm2 up to 180 V. The ohmic contact characteristics are comparable to the ‘ideal’ ohmic contact. Detectors using this technology were produced. Alpha spectra of 241Am are collected. Energy resolutions of 24 keV and 26 keV for n- and p-Si detectors, respectively, were measured.

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