No abstract

in the bulk utter unncaling in forming gas but not after high tempemture ( 1100"C) anneaIs in Ar. The presence of hydrogen dmmatical[y incrcascs the broad PL band centered in the near-infmred after tinncaling Lit1100"C but htis almost no effect on the PL spectral distribution. Hydrogen is found to sclccti~cly trap in the region where Si nanocrystais are formed, consistent with a model of H ptissivatin: surfucc states tit the Si/SiO: interface that leads to enhanced PL. The thermal stabiIity of the tmppul H and the PL yield observed ufter a high temperature anneal have been studied. The hydrogen concentration and PL yield are unchanged for subsequent anneals up to 400"C. However, ubovc -IO(YCthe PL decreases tind a more complicated H chemistry is evident. Similar concentmtions of H or D ure tmpped after annealing in HJ or Dj forming gas; however, no differences in the PL yield or spcctrtil distribution tire observed, indicating that the electronic transitions resulting in luminescence are not dependent on the moss of the hydrogen species.

No abstract

No abstract

No abstract