Cu-Al-N thin films were deposited by means of the unbalanced magnetron cosputtering technique, varying the pulsed DC source power that is associated with the aluminum target. The structural characterization, done through x ray difraction (XRD) and transmition electronic microscopy (TEM), showed that the films were nanocrystalline, with a crystallite size of an order of magnitude of 10 nm. According to the chemical composition results, they consisted of a Cu-Al phase, copper nitride and aluminum nitride, that depended on the deposition power. The electrochemical characterization was performed by means of Tafel extrapolation and electrochemical impedance spectroscopy (EIS). The Tafel results showed a decrease in the corrosion current with an increase in the power, and the electrochemical impedance results showed an inductive behavior at low frequencies.