Article:Wang, D.Q., Hamilton, A.R., Farrer, I. orcid.org/0000-0002-3033-4306 et al. (2 more authors) (2016) Double-layer-gate architecture for few-hole GaAs quantum dots. Nanotechnology, 27 (33). https://doi.org/10.1088/0957-4484/27/33/334001 This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/27/33/334001. eprints@whiterose.ac.uk https://eprints.whiterose.ac.uk/ Reuse Unless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. Abstract. We report the fabrication of single and double hole quantum dots using a double-layer-gate design on an undoped accumulation mode AlxGa 1−x As/GaAs heterostructure. Electrical transport measurements of a single quantum dot show varying addition energies and clear excited states. In addition, the two-level-gate architecture can also be configured into a double quantum dot with tunable inter-dot coupling. † Present Address: