Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today’s semiconductor technology. In this letter, the reproducible hysteresis and resistive switching characteristics of metal-CuxO-metal (M-CuxO-M) heterostructures driven by low voltages are demonstrated. The fabrication of the M-CuxO-M heterostructures is fully compatible with the standard complementary metal-oxide semiconductor process. The hysteresis and resistive switching behavior are discussed. The good retention characteristics are exhibited in the M-CuxO-M heterostructures by the accurate controlling of the preparation parameters.

Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today’s semiconductor technology. In this letter, the improvement of reproducible hysteresis and resistive switching characteristics of metal-La0.7Ca0.3MnO3-metal (M-LCMO-M) heterostructures is demonstrated. The fabrication of the M-LCMO-M heterostructures is compatible with the standard complementary metal-oxide semiconductor process. The effect of oxygen annealing on the improvement of the hysteresis and resistive switching is discussed. The good retention characteristics are exhibited in the M-LCMO-M heterostructures by the accurate controlling of the preparation parameters.