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The fabrication and characterization of gallium-diffused planar waveguides in sapphire are reported. Waveguides were fabricated by diffusion of 60-200-nm-thick films of gallium oxide into c -cut sapphire at 1600 degrees C for times ranging from 6 to 16 h. Near-field intensity profiles of the guided modes were measured at wavelengths from 488 to 850 nm, and the surface-index elevation was estimated to be up to (0.6+/-0.02)x10(-2) . Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.

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