Cathodes consisting of arrays of high aspect ratio field emitters are of great interest as sources of electron beams for vacuum electronic devices. The desire for high currents and current densities drives the cathode designer towards a denser array, but for ungated emitters, denser arrays also lead to increased shielding, in which the field enhancement factor β of each emitter is reduced due to the presence of the other emitters in the array. To facilitate the study of these arrays, we have developed a method for modeling high aspect ratio emitters using tapered dipole line charges. This method can be used to investigate proximity effects from similar emitters an arbitrary distance away and is much less computationally demanding than competing simulation approaches. Here, we introduce this method and use it to study shielding as a function of array geometry. Emitters with aspect ratios of 102–104 are modeled, and the shielding-induced reduction in β is considered as a function of tip-to-tip spacing for emitter pairs and for large arrays with triangular and square unit cells. Shielding is found to be negligible when the emitter spacing is greater than the emitter height for the two-emitter array, or about 2.5 times the emitter height in the large arrays, in agreement with previously published results. Because the onset of shielding occurs at virtually the same emitter spacing in the square and triangular arrays, the triangular array is preferred for its higher emitter density at a given emitter spacing. The primary contribution to shielding in large arrays is found to come from emitters within a distance of three times the unit cell spacing for both square and triangular arrays.

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Explosive field emission cathodes comprise an important class of cathodes for high power microwave tubes, having the advantages of light weight as well as requiring no heater for electron emission. Generally, however, this class of cathodes suffers from large amounts of outgassing, nonuniform emission, and very high emittance. This article describes a new class of carbon velvet cathodes that have been coated with a cesium iodide (CsI) salt. We discuss two manifestations of the cathode. We review the lifetime and operation of the cathodes with two different pulse durations, as well as the outgassing from the cathodes during operation. Lifetimes in excess of 980 000 pulses have been obtained, with an outgassing rate of 3.5 atoms per electron. Finally, we discuss the uniformity and emittance of tufted carbon cathodes that have been coated with CsI salt. For comparison, we relate these results to those previously obtained from other cathodes in this class. The cathodes have an emittance of 2.5π mm rad, as compared to the theoretical value, based on computation, of 2.3π mm rad. These new cathodes differ greatly from cathodes such as polymer velvet and tufted carbon fiber cathodes in that no volatiles reside on the cathode and in that a unique coating technique allows the cathodes to function. This new class of cathodes offers a potential replacement for existing thermal cathodes, in that no heater is required for superior operation with low outgassing and long lifetime.

The emittance of high brightness electron sources, particularly field emitters and photocathodes but also thermionic sources, is increased by surface roughness on the emitter. Such structure causes local field enhancement and complicates both the prediction of emittance and the underlying emission models on which such predictions depend. In the present work, a method to find the emission trajectories near regions of high field enhancement is given and applied to emittance predictions for field, photo, and thermal emission for an analytically tractable hemispherical model. The dependence of the emittance on current density, spatial variation, and acceleration close to the emission site is identified and the impact of space charge discussed. The methodology is extensible to field emission from close-spaced wirelike structures, in particular, and extensions to that configuration are discussed. The models have application to electron sources for high frequency vacuum electronics, high power microwave devices, and free-electron lasers.