In the recent scenario, distillation with solar still plays a vital role in obtaining potable water from brackish and sea water. The inspiration for this paper is the partial availability of clean water resources and the plenty of availability water due to potential renovation into filtered water using solar energy. In this paper, an attempt is made to study the productivity of pyramid solar still. To achieve this goal, a distillation system was fabricated which incorporates a square pyramid fiber glass placed on a black coated Aluminum basin. The solar radiation, which is incident on the black coated basin heats up the water and evaporates it forming vapors onto the fiber glass cover which is condensed to potable water. For analyzing the performance of still, the distillation system is operated at different water depths viz; 5 cm and 10 cm, along with paraffin wax material and preheated water, The experimental setup is placed at an angle of 50 degree to the horizontal. The hourly productivity is higher in case of solar still with PCM during sunny days. From the experimental analysis, it is observed that there is 75% increase in the efficiency of still, when operated with PCM, at 5 cm depth of water.

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Today's Through Silicon Via (TSV) processes are limited to aspect ratios of 10:1. High performance logic devices drive the need for aspect ratios approaching 20:1 in order to achieve the desired performance while simultaneously reducing costs. The reduced via area required on the wafer enables the designer to utilize less real estate on the die to reduce cost or to potentially add redundant vias to improve yield. However, current conventional processes and techniques are not capable of achieving robust fill on aspect ratios greater than 12:1. This presentation will highlight the technical challenges in achieving robust copper fill on super high aspect ratio TSV structures. Additionally, a compelling, economic solution pathway will be presented that integrates a low temperature conformal high quality dielectric isolation layer, a high step coverage Cu barrier / seed technology and a void free high speed electroplating process with a wide process window that could accelerate the adoption of the high aspect ratio TSV design schemes.

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