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A novel laser-switch has been developed, designed and manufactured in a standard 6 level metal CMOS process. The redimensioned laser-switches combine a laser link and via (fuse) corresponding to minimum design rules in a single device. Due to vertical arrangement of the linking and the cutting structure (via), an area reduction of more than 30% is achieved, compared to laser arrays utilizing traditional laser structures. Simultaneous connecting and disconnecting reduces the processing time by SO%, since an additional process step is omitted. The resistance of the formed link structures is very low (R/2r12mrd,on=0.065 R rRl~xlomrdtun =0.118 a). Optimal values have been found for laser parameters to process the cutting structure with 100% yield. A first estimation of life-time results in to 1=22 a. Arrangements of laser-switches for bus configuration and repair, and for overwriting static configuration signals are proposed,

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AQsfrucf-This paper investigates the properties of asymmetric coupled lines built in a 0.25 pm CMOS technology in the frequency range of 50 MHz to 26.5 GHz We show that the frequencydependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.