We report our study of deposited thermal energy in silicon induced by multiple-pulse femtosecond laser irradiation. Using infrared thermography, we quantified through in situ direct measurement of temperature fields that a significant portion of laser power (two-thirds or more) was deposited into the silicon substrate instead of being reflected or carried away with the ablated material. This is believed to be the first reported study of direct in situ measurement of temperature fields as the result of deposited thermal energy from multiple femtosecond laser pulses. Our simulation results support the measured data.

With the aid of an infrared thermograph technique, we directly observed the temperature variation across a bulk copper specimen as it was being ablated by multiple femtosecond laser pulses. Combining the experimental results with simulations, we quantified the deposited thermal power into the copper specimen during the femtosecond laser ablation process. A substantial amount of thermal power (more than 50%) was deposited in the copper specimen, implying that thermal effect can be significant in femtosecond laser materials processing in spite of its ultrashort pulse duration.

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