As the field of superconducting quantum computing advances from the few-qubit stage to largerscale processors, qubit addressability and extensibility will necessitate the use of 3D integration and packaging. While 3D integration is well-developed for commercial electronics, relatively little work has been performed to determine its compatibility with high-coherence solid-state qubits. Of particular concern, qubit coherence times can be suppressed by the requisite processing steps and close proximity of another chip. In this work, we use a flip-chip process to bond a chip with superconducting flux qubits to another chip containing structures for qubit readout and control. We demonstrate that high qubit coherence (T1, T 2,echo > 20 µs) is maintained in a flip-chip geometry in the presence of galvanic, capacitive, and inductive coupling between the chips.

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As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate interconnect crowding. Through-silicon vias (TSVs) represent a promising approach to three-dimensional (3D) integration in superconducting qubit arrays-provided they are compact enough to support densely-packed qubit systems without compromising qubit performance or lowloss signal and control routing. In this work, we demonstrate the integration of superconducting, high-aspect ratio TSVs-10 μm wide by 20 μm long by 200 μm deep-with superconducting qubits. We utilize TSVs for baseband control and high-fidelity microwave readout of qubits using a two-chip, bump-bonded architecture. We also validate the fabrication of qubits directly upon the surface of a TSV-integrated chip. These key 3D-integration milestones pave the way for the control and readout of high-density superconducting qubit arrays using superconducting TSVs.