The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202105485.Human behavior (e.g., the response to any incoming information) has very complex forms and is based on the response to consecutive external stimuli entering varied sensory receptors. Sensory adaptation is an elementary form of the sensory nervous system known to filter out irrelevant information for efficient information transfer from consecutive stimuli. As bioinspired neuromorphic electronic system is developed, the functionality of organs shall be emulated at a higher level than the cell. Because it is important for electronic devices to possess sensory adaptation in spiking neural networks, the authors demonstrate a dynamic, real-time, photoadaptation process to optical irradiation when repeated light stimuli are presented to the artificial photoreceptor. The filtered electrical signal generated by the light and the adapting signal produces a specific range of postsynaptic states through the neurotransistor, demonstrating changes in the response according to the environment, as normally perceived by the human brain. This successfully demonstrates plausible biological sensory adaptation. Further, the ability of this circuit design to accommodate changes in the intensity of bright or dark light by adjusting the sensitivity of the artificial photoreceptor is demonstrated. Thus, the proposed artificial photoreceptor circuits have the potential to advance neuromorphic device technology by providing sensory adaptation capabilities.
We investigated the effect of atomic layer deposition (ALD) Al2O3 (50 nm)/plasma-enhanced chemical vapour deposition (PECVD) SiO2 (250 nm) and PECVD SiO2 (300 nm) passivation layers on the leakage current and efficiency of InGaN-based micro-LEDs with different sizes. Regardless of passivation layers, the leakage current increased with decreasing LED size and increasing reverse bias. Emission microscopy examination showed that with increasing reverse bias, the number of defect-related emission spots and their intensities increased. For the micro-LEDs <50 μm, the emission spots were mainly located at the sidewall regions. Above −10 V, the single PECVD SiO2 passivation layer gave higher leakage current than the double ALD-Al2O3/PECVD-SiO2 layer. The micro-LEDs with the single passivation layer gave the ideality factors of about 2.0, while that with the double layer exhibited values smaller than 2.0. The micro-LEDs with the double passivation layer exhibited external quantum efficiency peaks at lower current density compared to those with the single layer. It was shown that smaller micro-LEDs were more sensitively dependent on the types of the passivation layers. These results exhibit that the ALD-Al2O3/PECVD-SiO2 passivation layer is more effective in suppressing the sidewall damage-induced current than the PECVD-SiO2 layer.
Palladium (Pd) nanogap hydrogen gas (H2) sensors based on the large volume expansion of β phase palladium hydride (β‐PdH) are highly promising, owing to their fast and accurate sensing capability at room temperature in air. However, such sensors do not work well at H2 concentrations below 1%. At such low H2 concentrations, Pd exists as α‐PdH, which has a slow and insufficient volume expansion and cannot completely close nanogaps. Furthermore, the lattice strains induced from the phase transition (α‐PdH → β‐PdH) behavior degrade the stable and repeatable long‐term sensing capability. Here, these issues are resolved by fabricating an array of periodically aligned alloyed palladium–gold nanoribbons (PdAu NRB) with uniform 15 nm nanogaps. The PdAu NRB sensor enables highly stable and ultrafast H2 sensing at the full detection range of H2 concentrations from 0.005% to 10% along with the excellent limit of detection (≈0.0027%), which is sufficiently maintained even after seven months of storage in ambient atmosphere. These breakthrough results will pave the way for developing a practical high‐performance H2 sensor chip in the future hydrogen era.
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