BackgroundThe aim of this study was to compare radiotherapy plans for Stage I-II nasal natural killer/T-cell lymphoma (NNKTL) using helical tomotherapy (HT), volumetric-modulated arc therapy (VMAT), Fixed-Field intensity-modulated radiotherapy (IMRT), and three-dimensional conformal radiotherapy (3D-CRT).MethodsEight patents with Stage I-II NNKTL treated with IMRT were re-planned for HT, VMAT (two full arcs), and 3D-CRT. The quality of target coverage, the exposure of normal tissue and the efficiency of radiation delivery were analyzed.ResultsHT showed significant improvement over IMRT in terms of D98%, cold spot volume and homogeneity index (HI) of planning target volume (PTV). VMAT provided best dose uniformity (p = 0.000) to PTV, while HT had best dose homogeneity among the four radiotherapy techniques (p = 0.000) to PTV. VMAT obviously reduced treatment time (p = 0.010; 0.000) compared to HT and IMRT. Mean dose of left and right optic nerve was significantly reduced by IMRT compared to HT (19.86%, p = 0.000; 21.40%, p = 0.002) and VMAT (8.97%, p = 0.002; 9.35%, p = 0.001), and maximum dose of left lens of VMAT increased over the HT (36.25%, p = 0.043) and IMRT (40.65%, p = 0.001).ConclusionThe unexpected results show that both HT and VMAT can achieve higher conformal treatment plans while getting worse organs at risk (OARs) sparing than IMRT for patients with Stage I-II NNKTL. VMAT requires the shortest delivery time, and IMRT delivers the lowest dose to most OARs. The results could provide guidance for selecting proper radiation technologies for different cases.

We report the coexistence of nonvolatile resistive and magnetization switching in Pt/BFO/Nb:SrTiO3 heterostructures.

We report the coexistence of nonvolatile resistive and magnetization switching in Pt/NiO/Nb:SrTiO3 heterostructures. These structures exhibit bipolar resistive switching (RS) behavior with multilevel RS characteristics, a maximum RS ratio of 105, and stable endurance properties. Under simple application of voltage pulses, the saturation magnetization of the NiO layer increases by up to three times in the different resistance states. This electrical modulation of both the resistive and magnetization switching properties is attributed to the migration of oxygen vacancies and charge trapping and detrapping at the heterojunction interface. Our results provide a pathway towards the electrical switching of both resistance and magnetization, which is likely to be useful for RS and magnetic multifunctional device applications.