t ch = 10 nm L g t ins Drain t ins = 4 nm Ti Pt InGaAs InAlAs InAlAsAbstract: High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich In x Ga 1-x As is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of highperformance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits. Introduction:In early 2000s, indium-rich In x Ga 1-x As (x>0.53) has recently emerged as the most promising non-Si n-channel material for post Si CMOS logic applications [1]. This is thanks to the outstanding electron transport characteristics, excellent interfacial quality of the highk/InGaAs gate stack by ALD and co-integration of InGaAsbased heterostructures with Si [1-2]. Recently, significant progress has been made on a variety of GaAs and InGaAs MOSFETs by many different groups. This paper reviews high-performance III-V devices for future logic applications, covers recent advances in some of the key enabling technology of InGaAs MOSFETs, and finally discusses options to further improve the performance of InGaAs MOSFETs.How good are III-V's for future logic applications?: As a way to assess the prospects for a future III-V MOSFET technology with gate lengths in the sub-10 nm range, we started our research in 2005 on state-of-the-art III-V High-Electron-Mobility-Transistors (HEMTs). The HEMT in itself a device with near THz capabilities, was an excellent prototype Field-Effect-Transistor (FET) for future logic. The

The characteristics of nitrided HfO2 films suggest that the diffusion of Si from the Si substrate to the film surface is induced by annealing in an NH3 ambient and that the incorporation of N is closely related to the diffusion of Si. Changes in the core-level energy state of the N 1s peaks of nitrided HfO2 films indicate that the quantity of N incorporated into the film drastically increases with increasing annealing temperature, especially at temperatures over 900°C. The incorporated N is mostly bonded to Si that diffused from the Si substrate into the film, while some N is incorporated to HfO2 at high annealing temperature. Some molecular N2 is generated in the film, which is easily diffused out after additional annealing. Moreover, the chemisorbed N in the film is not completely stable, compared to that at the interfacial region: i.e., the N in the film predominantly out diffuses from the film after additional annealing in a N2 ambient.

The effects of postannealing treatment in ambient forming gas (10%normalH2:90%normalN2) on low- k SiOC(H) films deposited by plasma-enhanced chemical vapor deposition were investigated. The use of SiOC(H) films has certain advantages due to the presence of alkyl groups in the film, which result in improved hardness properties, compared with previously reported low- k materials. Metal-oxide-semiconductor capacitance–voltage measurements at 100 kHz indicated that the relative dielectric constant ( k -value) of the as-grown film was approximately 2.4. When rapid thermal annealing (RTA) temperatures of up to 500°C were used, the Si–O–C bonds were nearly maintained when the annealing was conducted using an ambient of forming gas, whereas they substantially decreased in an ambient of normalN2 gas. The decrease in Si–O–C bond content results in an increase in k -value. In the film that underwent an RTA treatment at 600°C , the alkyl groups of the film were released and the Si–O network was enhanced in both ambient gases, which has a critical effect on the change in k -value.

The characteristics of interfacial reactions and the valence band offset of HfO2 films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO2 film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600°C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.

This paper reports tri-gate sub-100 nm In 0.53 Ga 0.47 As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of g m,max > 1.5 mS/µm, at V DS = 0.5 V. This result is the best balance of g m,max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ 0 = 760 cm 2 /V-s and peak v x0 = 1.6×10 7 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.Introduction: Indium-rich InGaAs channel materials are a candidate for future low-power logic applications [1-2]. Tri-gate transistor architecture has been successfully demonstrated for improved electrostatics in Si MOSFETs [3][4] and most recently in III-V MOSFETs [5][6]. However, most of III-V tri-gate devices reported so far have shown wide fin geometry or poor interface quality between high-k dielectric and sidewall of etched Fin, failing to demonstrate performance and electrostatics benefit over the best ultrathin-body (UTB) planar III-V QW MOSFETs [7][8]. In this work, tri-gate In 0.53 Ga 0.47 As QW MOSFETs with bi-layer high-k dielectrics of Al 2 O 3 /HfO 2 are reported. In particular, L g = 60 nm tri-gate In 0.53 Ga 0.47 As QW MOSFETs with narrow fin width (W fin ) of 30 nm, fin height (H fin ) of 20 nm and EOT < 1 nm, yield excellent electrostatic integrity and performance benefit over UTB planar III-V MOSFETs, such as S = 77 mV/dec., DIBL = 10 mV/V, g m > 1.5 mS/µm and v ox = 1.6ⅹ10 7 cm/s. This result is significant because it shows that excellent electrostatics and performance can be achieved with high-k oxides directly on an etched tri-gate MOSFETs down to L g = 60 nm.