A shorted anode insulated gate bipolar transistor (SA-LIGBT) has a negative differential resistance (NDR) region that causes undesirable operation of the device and increases the onstate voltage drop. We propose a lateral trench gate IGBT (LTIGBT) structure that has an insulated trench collector. The insulated trench collector can be formed when the trench gate is formed. The insulated trench collector reduces the NDR region without stretching the width of the device. The proposed SA-LTIGBT has a lower snap-back voltage than conventional SA-LTIGBT. The breakdown voltage and turn-off time do not degenerate, in contrast to a conventional SA-LTIGBT. We analyzed the proposed device using two-dimensional numerical simulation.I.

Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large Vce,sat and turn-off time due to p+ drain and tail current. Therefore, inverter modules consist of Si IGBT with relatively low efficiency. If we can use MOSFETs instead of IGBT in inverter modules, it is possible to achieve high efficiency because of short turn-off time and high operating frequency. Yet also has a problem; Si MOSFETs has large on-resistance compared to Si IGBTs. In this study, SiC(Silicon Carbide) was used to make MOSFETs instead of Si. Futhermore, an accumulation channel concept is adapted to a SiC trench MOSFET, namely Trench ACCUFET. Compared with conventional SiC trench MOSFETs, the novel SiC trench ACCUFET structure has not only lower on-resistance but also high breakdown voltage as shown by the simulation results. We fabricated the Trench ACCUFET for verification, and described improvements that is to be made.