We report on the use of sensing devices that have a metal-insulator-gap-insulator-semiconductor structure. We have used capacitance-voltage measurements from a metal-insulator-gap-insulator-semiconductor sensing device to characterize different pH solutions and deoxyribonucleic acid (DNA) solutions. Hysteresis in the capacitance-voltage curves results from mobile ionic charges in the solutions and the influence of changes on the sensing surface condition. As the pH decreases in the pH range of 2.7 to 7.0, the flatband voltage shift toward the negative voltage increases. The differences in the flatband voltage shift in capacitance-voltage curves are related to the mobile ionic charge density in solutions with different pH values or DNA molecules.

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A metal-insulator-gap-insulator-semiconductor sensing device has been characterized in different pH solutions and with different single strand DNA solutions by capacitance-voltage measurements. The capacitance-voltage curves show the difference from pH and the difference from DNA base by hysteresis and flat band voltage shift due to mobile ionic charge in the solution. As the pH decreases, the flat band voltage shift increases in the pH range of 2.7 to 7.0. The hysteresis in the capacitance-voltage curves shows the influence of ionic charge in the solutions and the change of the sensing surface condition. The difference of the flat band voltage shift in the capacitance-voltage curves is related to the mobile ionic charge in the solutions due to pH or DNA molecules.

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